发明名称 Rapid switchable HV P-MOS power transistor driver with constant gate-source control voltage
摘要 Systems and methods for providing a rapid switchable high voltage power transistor driver with a constant gate-source control voltage have been disclosed. A low voltage control stage keeps the gate-source voltage constant in spite of temperature and process variations. A high voltage supply voltage can vary between about 5.5 Volts and about 40 Volts. The circuit allows a high switching frequency of e.g. 1 MHz and minimizes static power dissipation.
申请公布号 US2012229173(A1) 申请公布日期 2012.09.13
申请号 US20110932994 申请日期 2011.03.11
申请人 JI CANG;DIALOG SEMICONDUCTOR GMBH 发明人 JI CANG
分类号 H03K3/00;H03K5/08 主分类号 H03K3/00
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