发明名称 |
Rapid switchable HV P-MOS power transistor driver with constant gate-source control voltage |
摘要 |
Systems and methods for providing a rapid switchable high voltage power transistor driver with a constant gate-source control voltage have been disclosed. A low voltage control stage keeps the gate-source voltage constant in spite of temperature and process variations. A high voltage supply voltage can vary between about 5.5 Volts and about 40 Volts. The circuit allows a high switching frequency of e.g. 1 MHz and minimizes static power dissipation.
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申请公布号 |
US2012229173(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
US20110932994 |
申请日期 |
2011.03.11 |
申请人 |
JI CANG;DIALOG SEMICONDUCTOR GMBH |
发明人 |
JI CANG |
分类号 |
H03K3/00;H03K5/08 |
主分类号 |
H03K3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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