STABLE AND ITERABLE PLASMA ION IMPLANTATION METHOD, AND DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for at least partially compensating an undesired effect of the interaction between ions to be implanted and a substrate in a plasma ion implanter.

SOLUTION: The method for plasma ion implantation on a substrate comprises the steps of: providing a plasma ion implanter which includes a process chamber, a source for generating plasma in the process chamber, a platen for holding the substrate in the process chamber, and a pulse source for generating an implantation pulse for accelerating ions directed to the substrate from plasma; executing plasma ion implantation on the substrate according to an implantation processing; and controlling the energy of the ions during the implantation to at least partially compensate an undesired effect of the interaction between the ions to be implanted and the substrate.

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