In at least one embodiment of the optoelectronic semiconductor device (1), the latter comprises at least two optoelectronic semiconductor chips (2) situated on a common mounting surface (5). An optical element (3) is disposed downstream of the semiconductor chips (2) along a main emission direction (M) and is spaced apart from the semiconductor chips (2). Along a direction (L) transversely with respect to the main emission direction (M), the optical element (3) has a transmission gradient in a transition region (30). The transition region (30) does not cover the semiconductor chips (2), as seen in a plan view of the mounting surface (5).
