发明名称 SEMICONDUCTOR DEVICE WITH RESISTANCE CIRCUIT
摘要 Provided is a resistance circuit having a resistance element with high resistance and high accuracy. An insulating film such as a silicon nitride film is formed on the resistance element made of a thin film material whose thickness is reduced to 500 Å or smaller. The insulating film prevents passing through of the contact hole arranged on the resistance element during etching for forming the contact hole.
申请公布号 US2012228719(A1) 申请公布日期 2012.09.13
申请号 US201213417425 申请日期 2012.03.12
申请人 HARADA HIROFUMI 发明人 HARADA HIROFUMI
分类号 H01L27/06 主分类号 H01L27/06
代理机构 代理人
主权项
地址