发明名称 METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING A RECESSED CHANNEL
摘要 A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.
申请公布号 US2012231605(A1) 申请公布日期 2012.09.13
申请号 US201113312176 申请日期 2011.12.06
申请人 KIM YOUNG-PIL;LEE HYUNG-IK;JEON WOO-SUNG;KIM KI-HONG;WON JUNG-YUN;JUNG IN-SUN 发明人 KIM YOUNG-PIL;LEE HYUNG-IK;JEON WOO-SUNG;KIM KI-HONG;WON JUNG-YUN;JUNG IN-SUN
分类号 H01L21/762 主分类号 H01L21/762
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