发明名称 |
A METHOD OF FORMING A CAPACITOR STRUCTURE, AND A SILICON ETCHING LIQUID USED IN THIS METHOD |
摘要 |
A method of forming a capacitor structure, which comprises: applying a silicon etching liquid which contains an alkali compound and a hydroxylamine compound in combination, with the pH adjusted to 11 or more, to a polycrystalline silicon film or an amorphous silicon film, removing a part or all of the polycrystalline silicon film or amorphous silicon film, and forming concave and convex shapes that constitute a capacitor. |
申请公布号 |
WO2012121263(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
WO2012JP55726 |
申请日期 |
2012.02.28 |
申请人 |
FUJIFILM CORPORATION;MIZUTANI, ATSUSHI;INABA, TADASHI;YOSHII, AKIKO |
发明人 |
MIZUTANI, ATSUSHI;INABA, TADASHI;YOSHII, AKIKO |
分类号 |
H01L21/308;H01L21/306;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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