| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the number of photolithography steps in a process for manufacturing a semiconductor device. <P>SOLUTION: A manufacturing method for a semiconductor device includes: successively forming a conductive film serving as a gate electrode, an insulation film serving as a gate insulation film, a semiconductor film including a channel region, and an insulation film serving as a channel protection film of a transistor; with the use of a resist mask light-exposed and developed using a photomask, which is a multi-gradation mask, (1) successively etching the insulation film serving as the channel protection film, the semiconductor film including the channel formation region, the insulation film serving as the gate insulation film, and the conductive film serving as the gate electrode in a region not provided with the resist mask; (2) exposing a part of the insulation film serving as the channel protection film by receding the resist mask through ashing or the like and removing only a region of the resist mask where the thickness of the remaining film is small; and (3) forming a pair of openings by etching the exposed part of the insulation film serving as the channel protection film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
