发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.
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申请公布号 |
US2012228614(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
US201213413854 |
申请日期 |
2012.03.07 |
申请人 |
KITAMURA MASAYUKI;WADA MAKOTO;YAMAZAKI YUICHI;KATAGIRI MASAYUKI;SAKATA ATSUKO;KAJITA AKIHIRO;SAKAI TADASHI;SAKUMA NAOSHI;MIZUSHIMA ICHIRO |
发明人 |
KITAMURA MASAYUKI;WADA MAKOTO;YAMAZAKI YUICHI;KATAGIRI MASAYUKI;SAKATA ATSUKO;KAJITA AKIHIRO;SAKAI TADASHI;SAKUMA NAOSHI;MIZUSHIMA ICHIRO |
分类号 |
H01L29/04;H01L21/20 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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