SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

摘要

Provided is a semiconductor substrate which comprises: a base substrate, the whole or a part of the surface of which is composed of a silicon crystal surface; an inhibitor body which is arranged above the base substrate, has an opening that reaches the silicon crystal surface, and inhibits growth of the crystal; a first crystal layer which is arranged above the silicon crystal surface that is exposed through the opening and which is composed of SixGe1-x (0 = x < 1); a second crystal layer which is arranged above the first crystal layer and composed of a group III-V compound semiconductor that has a wider band gap than the first crystal layer; and a pair of metal layers which are arranged above the inhibitor body and the second crystal layer. Each of the pair of metal layers is in contact with the first crystal layer and the second crystal layer.