| 摘要 |
The present invention provides the use of atmospheric pressure chemical vapour deposition (APCVD) for producing a film of thermochmmic transition metal-doped vanadium (iN) oxide on a substrate. Specifically, the invention prevides a method of producing a film of thermochromic transition metal-doped vanadium (IV) oxide on a substrate by atmospheric pressure chemical vapour deposition comprising the steps of: (i) reacting together (a) a vanadium precursor, (b) a transition metal dopant precursor, and (c) an oxygen precursor in an atmospheric pressure chemical vapour deposition reactor to form thermochromic transition metal-doped vanadium (IV) oxide, and (ii) depositing the thermochromic transition metal-doped vanadium (IV) oxide onto the substrate. A preferred transition metal dopant is tungsten. The invention also provides transition metal-doped vanadium (TV) oxide, films thereof and substrates (e.g., glass substrates) coated with a film of transition metal-doped vanadium (IV) oxide. Intelligent window systems, infrared modulators and data storage devices comprising such substrates are also provided. |
