| 摘要 |
PURPOSE: An etching method, an etching apparatus, and a storage medium are provided to obtain a high etching rate of a silicon nitride film by pre-heating a substrate with heated H2SO4 before an etching process. CONSTITUTION: Aspin chuck(10) comprises a substrate holding part(14) and a rotation driving part(16). A cup(18) receiving a processing liquid distributed from a wafer is installed around the substrate holding part. A chemical liquid nozzle(20) supplies a chemical liquid to the wafer. A chemical liquid supply tool(26) comprises a sulfuric acid supply system(30) and a supply system(40). A pump(33) and a heater(34) are installed in a circulation duct(32) of the sulfuric acid supply system. |
