III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: An III group nitride semiconductor light emitting diode is provided to improve photonic efficiency by minimizing the area of an active layer creating light in the process forming an electrode to be diminished. CONSTITUTION: A buffer layer is formed on a substrate(111). An n-type III group nitride semiconductor layer(113) is formed on the buffer layer. An active layer(114) is formed on the n-type III group nitride semiconductor layer. A p-type III group nitride semiconductor layer(115) is formed on the active layer. A p-side electrode(116) is formed on the p-type III group nitride semiconductor layer. A p-side bonding pad(117) is formed on the p-side electrode. An n-side electrode is formed the -type III group nitride semiconductor layer which is exposed by etching the p-type III group nitride semiconductor layer and the active layer.