| 摘要 |
PURPOSE: A semiconductor memory device is provided to improve the driving capacity of a sense amplifier by supplying the same cell plate voltage to two cell mats when a noise occurs. CONSTITUTION: A first mat(10-1) includes a positive bit line and a first plate line. A second mat(10-2) is separated from the first mat and includes a sub bit line and a second plate line. A sense amplifier(SA) is formed between the first mat and the second mat and senses and amplifies data applied from the positive bit line and the sub bit line. A plate line control unit(100) selectively connects the first plate line to the second plate line according to a bit line equalizing signal. [Reference numerals] (100) Plate line control unit |
