| 摘要 |
A power semiconductor module is provided in which temperature rise of switching elements made of an Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements (4) made of the Si semiconductor and diodes (5) made of a wide-bandgap semiconductor, the diodes (5) are arranged in the middle region of the power semiconductor module (100), and the switching elements (4) are arranged at both sides or in the periphery of the middle region of the power semiconductor module (100). |
