发明名称 |
Method including producing a monocrystalline layer |
摘要 |
A method including producing a monocrystalline layer is disclosed. A first lattice constant on a monocrystalline substrate has a second lattice constant at least in a near-surface region. The second lattice constant is different from the first lattice constant. Lattice matching atoms are implanted into the near-surface region. The near-surface region is momentarily melted. A layer is epitaxially deposited on the near-surface region that has solidified in monocrystalline fashion. |
申请公布号 |
US8263483(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US20090498418 |
申请日期 |
2009.07.07 |
申请人 |
HIRLER FRANZ;SCHULZE HANS-JOACHIM;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HIRLER FRANZ;SCHULZE HANS-JOACHIM |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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