发明名称 Method including producing a monocrystalline layer
摘要 A method including producing a monocrystalline layer is disclosed. A first lattice constant on a monocrystalline substrate has a second lattice constant at least in a near-surface region. The second lattice constant is different from the first lattice constant. Lattice matching atoms are implanted into the near-surface region. The near-surface region is momentarily melted. A layer is epitaxially deposited on the near-surface region that has solidified in monocrystalline fashion.
申请公布号 US8263483(B2) 申请公布日期 2012.09.11
申请号 US20090498418 申请日期 2009.07.07
申请人 HIRLER FRANZ;SCHULZE HANS-JOACHIM;INFINEON TECHNOLOGIES AUSTRIA AG 发明人 HIRLER FRANZ;SCHULZE HANS-JOACHIM
分类号 H01L21/20 主分类号 H01L21/20
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