发明名称 |
Pattern generating method, method of manufacturing semiconductor device, and recording medium |
摘要 |
Pattern formation simulations are performed based on design layout data subjected to OPC processing with a plurality of process parameters set in process conditions. A worst condition of the process conditions is calculated based on risk points extracted from simulation results. The design layout data or the OPC processing is changed such that when a pattern is formed under the worst condition based on the changed design layout data or the changed OPC processing a number of the risk points or a risk degree of the risk points of the pattern is smaller than the simulation result. |
申请公布号 |
US8266552(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US20100705640 |
申请日期 |
2010.02.15 |
申请人 |
TAGUCHI TAKAFUMI;KOTANI TOSHIYA;TAKIMOTO MICHIYA;NAKAJIMA FUMIHARU;ABURADA RYOTA;MASHITA HIROMITSU;IYANAGI KATSUMI;KODAMA CHIKAAKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAGUCHI TAKAFUMI;KOTANI TOSHIYA;TAKIMOTO MICHIYA;NAKAJIMA FUMIHARU;ABURADA RYOTA;MASHITA HIROMITSU;IYANAGI KATSUMI;KODAMA CHIKAAKI |
分类号 |
G06F17/50;G03F1/36;G03F1/68;G03F1/70;G05B13/04;G06F19/00;H01L21/027 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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