发明名称 Power semiconductor module with overcurrent protective device
摘要 A power semiconductor module having at least one fuse. The power semiconductor module comprises a housing, load terminal elements that lead outside of the housing, and a substrate disposed inside the housing with a plurality of metal connecting tracks of different polarity electrically insulated from one another. On at least one of these connecting tracks, at least one power semiconductor component is disposed and is connected correctly in terms of circuitry to first connecting elements that have a first line cross section. The fuse comprises a second connecting element that has a second line cross section, less than the first, and is disposed between two connecting tracks and/or between a connecting track and a load terminal element. The second connecting element is sheathed in one portion by an explosion protection means.
申请公布号 US8264071(B2) 申请公布日期 2012.09.11
申请号 US20060527936 申请日期 2006.09.27
申请人 KRONEDER CHRISTIAN;SCHEUERMANN UWE;SCHREIBER DEJAN;SEMIKRON ELEKTRONIK GMBH & CO. KG 发明人 KRONEDER CHRISTIAN;SCHEUERMANN UWE;SCHREIBER DEJAN
分类号 H01L23/62 主分类号 H01L23/62
代理机构 代理人
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