发明名称 Non-volatile memory device and charge pump circuit for the same
摘要 A charge pump apparatus comprises a plurality of charge pump stages. The charge pump stages each include a respective output node. Output nodes are connected to charge boosting circuitry and to precharge circuitry. The charge boosting circuit receives one or more clock signals. The precharge circuits have a first state allowing the respective pump-stage output node to fluctuate at a level above a standby wordline voltage, and a second state coupling the respective pump-stage output node to the standby wordline voltage.
申请公布号 US8264274(B2) 申请公布日期 2012.09.11
申请号 US201113301534 申请日期 2011.11.21
申请人 LIN YUNG FENG;KUO NAI-PING;MACRONIX INTERNATIONAL CO., LTD. 发明人 LIN YUNG FENG;KUO NAI-PING
分类号 G05F1/10 主分类号 G05F1/10
代理机构 代理人
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