发明名称 |
Non-volatile memory device and charge pump circuit for the same |
摘要 |
A charge pump apparatus comprises a plurality of charge pump stages. The charge pump stages each include a respective output node. Output nodes are connected to charge boosting circuitry and to precharge circuitry. The charge boosting circuit receives one or more clock signals. The precharge circuits have a first state allowing the respective pump-stage output node to fluctuate at a level above a standby wordline voltage, and a second state coupling the respective pump-stage output node to the standby wordline voltage. |
申请公布号 |
US8264274(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US201113301534 |
申请日期 |
2011.11.21 |
申请人 |
LIN YUNG FENG;KUO NAI-PING;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LIN YUNG FENG;KUO NAI-PING |
分类号 |
G05F1/10 |
主分类号 |
G05F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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