| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a SiC vertical heat treatment apparatus in which gas is actively supplied to an array region of SiC substrates in a reaction chamber, and a gas flow is optimized to facilitate consumption of material gas on the substrate and to equalize a gas flow in a surface of the substrate so that the gas is prevented from flowing downward between stacked substrates. <P>SOLUTION: A vertical substrate treatment apparatus for depositing a silicon carbide film on a substrate, includes: a reaction chamber for enabling a silicon carbide film to grow; boards arranged in the reaction chamber, on which a plurality of substrates 14 are stacked in parallel; a first gas supply nozzle 60 provided in an array region of the substrates in the reaction chamber, for supplying at least a silicon-atom-containing gas; a second gas supply nozzle 70 arranged in a different place from the first gas supply nozzle in the array region of the substrates, for at least supplying a carbon-atom-containing gas. Furthermore, a wall body 300 is provided for actively supplying the gas to the array region of the substrates in the reaction chamber to optimize a gas flow. <P>COPYRIGHT: (C)2012,JPO&INPIT |
