| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a carbon material that can be used in technical fields such as semiconductor manufacturing, where great importance is placed on low dusting characteristics, by suppressing the formation of particles, and a method for the production thereof. <P>SOLUTION: The carbon material has a chromium carbide layer formed on the surface of a carbon base material, wherein the chromium carbide layer is constituted by Cr<SB POS="POST">3</SB>C<SB POS="POST">2</SB>. The carbon material can be prepared via a first step in which a chromium carbide layer including a chromium carbide other than Cr<SB POS="POST">3</SB>C<SB POS="POST">2</SB>is formed on the surface of a carbon base material, and a second step in which the carbon base material is subjected to a heat treatment in a reductive atmosphere to convert the chromium carbide other than Cr<SB POS="POST">3</SB>C<SB POS="POST">2</SB>into Cr<SB POS="POST">3</SB>C<SB POS="POST">2</SB>. <P>COPYRIGHT: (C)2012,JPO&INPIT |
