| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress decline of a reliability service life in a MISFET. <P>SOLUTION: A semiconductor device 100 has at least one MISFET. The MISFET includes: a semiconductor substrate 101 of a first conductivity type; a gate electrode 105 formed on the semiconductor substrate 101 through a gate insulation film 104; a source region 106 of a second conductivity type formed on the side of the gate electrode 105 in the semiconductor substrate 101; a drain region 107 of the second conductivity type formed on the other side; and a channel region 111 held between the source region 106 and the drain region 107 at the lower part of the gate electrode 105 in the semiconductor substrate 101. The gate insulation film 104 is formed over from the lower part of a bottom surface of the gate electrode 105 to the upper part of a side face. In the channel region 111, an impurity density in a first region near the drain region 107 is lower than an impurity density in a second region other than the first region in the channel region 111. <P>COPYRIGHT: (C)2012,JPO&INPIT |
