RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

摘要

PURPOSE: A resist composition and a method for forming resist patterns are provided to improve pattern shape and lithography characteristic. CONSTITUTION: A resist composition includes a base component, an acid generating component generating acid by exposure, and a polymer compound with a structural unit represented by chemical formula 1. The dissolution of the base component to a developer is changed by the action of the acid. The base component is used for lithography using light in the wavelength range of 193nm or less as exposure light source. The content of the polymer compound is 25 mass by weight based on 100 mass by weight of the base component. In chemical formula 1, R is a hydrogen atom, a C1-5 alkyl group, or a C1-5 halogenated alkyl group; and R1 is an organic group with one or more primary or secondary alcoholic hydroxyl groups or a linear tertiary alcoholic hydroxyl group.