| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a wait time for memory access during consecutive read-modify-write processes without using dual port memory. <P>SOLUTION: A storage device comprises: a single port memory that is divided into a first memory region and a second memory region; an address selection circuit that selects either the first memory region or the second memory region based on an address when the address selection circuit has received a memory write access instruction for specifying the address and write data; an address holding circuit that holds the address; a data generation circuit that generates a memory write data from read data retrieved from the selected memory region and the write data; and an output destination selection circuit that selects either the first memory region or the second memory region as a write access target of the memory write data based on the address held in the address holding circuit. <P>COPYRIGHT: (C)2012,JPO&INPIT |
