| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, with which it is possible to etch a processing target film with favorable controllability using a resist having high etching resistance. <P>SOLUTION: With a semiconductor device manufacturing method according to an embodiment, a processing target film is formed on a semiconductor substrate 1 and a negative resist 3 is formed on the processing target film. A photocurable resist 4 is formed on the negative resist 3 and a main surface side of a template 5, which has an uneven pattern whose convex part is partially provided with a light shield part, is pressurized toward the photocurable resist 4. The template 5 is irradiated with light by emitting the light from a back surface side of the template 5 and the negative resist 3 and the photocurable resist 4 are developed in areas where they are not irradiated with the light to thereby transfer the uneven pattern of the template 5 to the negative resist 3 and the photocurable resist 4. The processing target film is etched using the uneven pattern transferred to the negative resist 3 and the photocurable resist 4 as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT |
