| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device, and a manufacturing method of the semiconductor memory device, both of which can obtain a short margin between an electric contact and an active area. <P>SOLUTION: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate; a plurality of element isolation insulators which are formed on an upper part of the semiconductor substrate and divide the upper part to a plurality of active areas extending in a first direction; and an electric contact connected to the active areas. A recessed region is formed over the entire active area in a second direction intersecting perpendicularly to the first direction in a part of area of the first direction among a top surface of each of the active areas. Positions of two of the electric contacts respectively connected to adjoining active areas are mutually different in the first direction. The electric contact contacts with a side surface of the recessed region, but does not contact with a bottom surface thereof. <P>COPYRIGHT: (C)2012,JPO&INPIT |
