发明名称 |
PLASMA GENERATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
PURPOSE: A plasma generation apparatus and a substrate processing apparatus are provided to reduce lattice defects density of a substrate caused by plasma impacts by maintaining the substrate in a floating state. CONSTITUTION: A plasma generation apparatus comprises a plurality of ground electrodes(120) which is arranged inside a vacuum container(102) and extended in parallel and one or more power electrodes(110) which is arranged between the ground electrodes. A discharge region with a predetermined interval between the power electrode and the ground electrode is included. The power electrode is tapered in a direction facing a substrate. The power electrode is connected to RF power(170). The vacuum container can have pressure below atmospheric pressure. The vacuum container can include an upper plate(104). |
申请公布号 |
KR101180373(B1) |
申请公布日期 |
2012.09.10 |
申请号 |
KR20110028765 |
申请日期 |
2011.03.30 |
申请人 |
JUSUNG ENGINEERING CO., LTD.;KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
CHANG, HONG YOUNG;SEO, SANG HUN;LEE, SEONG YUN |
分类号 |
H05H1/34;H01L21/205;H05H1/46 |
主分类号 |
H05H1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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