发明名称 PLASMA GENERATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS
摘要 PURPOSE: A plasma generation apparatus and a substrate processing apparatus are provided to reduce lattice defects density of a substrate caused by plasma impacts by maintaining the substrate in a floating state. CONSTITUTION: A plasma generation apparatus comprises a plurality of ground electrodes(120) which is arranged inside a vacuum container(102) and extended in parallel and one or more power electrodes(110) which is arranged between the ground electrodes. A discharge region with a predetermined interval between the power electrode and the ground electrode is included. The power electrode is tapered in a direction facing a substrate. The power electrode is connected to RF power(170). The vacuum container can have pressure below atmospheric pressure. The vacuum container can include an upper plate(104).
申请公布号 KR101180373(B1) 申请公布日期 2012.09.10
申请号 KR20110028765 申请日期 2011.03.30
申请人 JUSUNG ENGINEERING CO., LTD.;KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 CHANG, HONG YOUNG;SEO, SANG HUN;LEE, SEONG YUN
分类号 H05H1/34;H01L21/205;H05H1/46 主分类号 H05H1/34
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