| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low-cost semiconductor storage device and a manufacturing method of the same. <P>SOLUTION: A semiconductor storage device manufacturing method according to an embodiment comprises: a step of forming a laminate in which insulation films and electrode films are alternately laminated one on top of another; a step of forming a hard mask on the laminate, in which a plurality of holes having sizes different from one another are formed; a step of filling up the smallest hole and reducing the size of other holes by depositing a mask material; a step of forming contact holes by performing etching by use of the mask material and the hard mask as a mask to remove a predetermined number of insulation films and the predetermined number of electrode films from regions directly below the other holes; a step of forming clearance gaps by performing etching via the contact holes to remove a part of each electrode film; a step of filling an insulation material in the clearance gaps; and a step of filling a conductive material in the contact holes. <P>COPYRIGHT: (C)2012,JPO&INPIT |
