| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film forming method by which a Co film can be deposited with good step coverage and with high reproducibility when depositing the Co film using cobalt carbonyl as a film forming material. <P>SOLUTION: The film forming method comprises feeding Co<SB POS="POST">4</SB>(CO)<SB POS="POST">12</SB>gas as a single material to a processing vessel 1 and thermally cracking Co<SB POS="POST">4</SB>(CO)<SB POS="POST">12</SB>on a substrate W, thereby depositing the Co film on the substrate W. Here, a solid material Co<SB POS="POST">2</SB>(CO)<SB POS="POST">8</SB>is used as the film forming material and evaporated at a temperature below the decomposition temperature of Co<SB POS="POST">2</SB>(CO)<SB POS="POST">8</SB>to produce Co<SB POS="POST">2</SB>(CO)<SB POS="POST">8</SB>gas, and the produced Co<SB POS="POST">2</SB>(CO)<SB POS="POST">8</SB>gas is brought to a temperature at which Co<SB POS="POST">4</SB>(CO)<SB POS="POST">12</SB>can stably exist so as to be changed into Co<SB POS="POST">4</SB>(CO)<SB POS="POST">12</SB>gas and fed to the processing vessel 1. Alternatively, a solid material Co<SB POS="POST">4</SB>(CO)<SB POS="POST">12</SB>is used as the film forming material, evaporated and fed to the processing vessel 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
