| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a configuration in which a gap is formed between adjacent memory cells and between the memory cells and a selective transistor and which suppresses short-circuiting of the selective transistor and peripheral circuits. <P>SOLUTION: A semiconductor storage device according to an embodiment comprises a memory cell string in which a plurality of memory cells, each including a gate, are connected in series. A selective transistor is connected to an end memory cell provided at one end of the memory cell string. A sidewall film coats a side surface of a gate of the end memory cell and a side surface of a gate of the selective transistor between the end memory cell and the selective transistor. A gap is formed between the sidewall film of the end memory cell and the sidewall film of the selective transistor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
