SEMICONDUCTOR SUBSTRATE SURFACE ETCHING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE WHEREON UNEVEN SHAPES ARE FORMED UPON SURFACE THEREOF USING SAID DEVICE

摘要

The present invention addresses a problem of providing a device which etches a semiconductor substrate surface in a manner which is adaptable to mass production while using a gas which reacts thermally with the semiconductor substrate as an etching gas. A semiconductor substrate surface etching device comprises: a load lock chamber; an etching chamber which can be depressurized to less than or equal to atmospheric pressure; an unload lock chamber; a conveyance mechanism for conveying a tray housing a semiconductor substrate from the load lock chamber through the etching chamber to the unload lock chamber; and a cooling mechanism which cools the semiconductor substrate and/or the tray. The surface etching device has a plurality of nozzles in the etching chamber which discharge etching gas toward the surface of the semiconductor substrate which is housed in the tray.