TUNNELING DEVICE AND METHOD FOR FORMING THE SAME

摘要

The present disclosure provides a tunneling device, which comprises: a substrate (1100); a channel region (1300) formed in the substrate, and a source region (1500) and a drain region (1400) formed on two sides of the channel region (1300); and a gate stack (1600) formed on the channel region (1300) and a first side wall (1910) and a second side wall (1920) formed on two sides of the gate stack (1600), wherein the gate stack (1600) comprises: a first gate dielectric layer (1631); at least a first gate electrode (1610) and a second gate electrode (1620) formed on the first gate dielectric layer (1631); a second gate dielectric layer (1632) formed between the first gate electrode (1610) and the first side wall (1910); and a third gate dielectric layer (1633) formed between the second gate electrode (1620) and the second side wall (1920).