IC DEVICE HAVING ELECTROMIGRATION RESISTANT FEED LINE STRUCTURES

摘要

An integrated circuit (IC) device (400) includes an electromigration (EM) resistant feed line (401). The IC device includes a substrate (405) including active circuitry (409). A back end of the line (BEOL) metallization stack (420) includes an interconnect metal layer (412) that is coupled to a bond pad (419) by the EM resistant feed line. A bonding feature (435) is on the bond pad. The EM resistant feed line (401) includes a uniform portion (402) and patterned trace portion (405) that extends to the bond pad which includes at least three sub-traces that are electrically in parallel. The sub-traces are sized so that a number of squares associated with each of the sub-traces is within a range of a mean number of squares for the sub-traces plus or minus twenty percent or a current density provided to the bonding feature through each sub- trace is within a range of a mean current density provided to the bonding feature plus or minus twenty percent.