发明名称 DEFECT EXTRACTION SCANNING ELECTRON MICROSCOPE INSPECTION SYSTEM, AND EXTRACTION METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide an inspection system with a scanning electron microscope for performing an inspection for the purpose of detecting a defect on a substrate with a circuit pattern of a semiconductor device, a liquid crystal, or the like formed thereon which allows the easy identification of a minute defect and a pseudo one which have been hard to identify, and an inspection method thereof. <P>SOLUTION: The method comprises: detecting a defective position of a pseudo defect or true defect by adding up images or image signals obtained by performing a number of scans on each location, and comparing the images or image signals which are different in the number of additions with each other. In the method, which of a pseudo defect and a true defect to detect is determined by a combination of comparison operations on the images different in the number of additions. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012169571(A) 申请公布日期 2012.09.06
申请号 JP20110031514 申请日期 2011.02.17
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KIN HIDENORI;GOTO YASUNORI;NOZOE MARI;HIROI TAKASHI;OMINAMI YUSUKE
分类号 H01L21/66;G01N23/225 主分类号 H01L21/66
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