发明名称 |
Setting a Reference Voltage in a Memory Controller Trained to a Memory Device |
摘要 |
Systems and methods to set a voltage value associated with a memory controller coupled to a memory device are disclosed. A particular method includes comparing test data of a test path to functional data of a functional path. The functional data may be generated based on device data received at a memory controller from a memory device. The test data may be affected by a voltage value applied to a resistor arrangement in electronic communication with the test path. The voltage value may be applied to the resistor arrangement based on the comparison.
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申请公布号 |
US2012224436(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201213472891 |
申请日期 |
2012.05.16 |
申请人 |
FOX BENJAMIN A.;HOVIS WILLIAM P.;LIANG THOMAS W.;RUDRUD PAUL W. |
发明人 |
FOX BENJAMIN A.;HOVIS WILLIAM P.;LIANG THOMAS W.;RUDRUD PAUL W. |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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