发明名称 Setting a Reference Voltage in a Memory Controller Trained to a Memory Device
摘要 Systems and methods to set a voltage value associated with a memory controller coupled to a memory device are disclosed. A particular method includes comparing test data of a test path to functional data of a functional path. The functional data may be generated based on device data received at a memory controller from a memory device. The test data may be affected by a voltage value applied to a resistor arrangement in electronic communication with the test path. The voltage value may be applied to the resistor arrangement based on the comparison.
申请公布号 US2012224436(A1) 申请公布日期 2012.09.06
申请号 US201213472891 申请日期 2012.05.16
申请人 FOX BENJAMIN A.;HOVIS WILLIAM P.;LIANG THOMAS W.;RUDRUD PAUL W. 发明人 FOX BENJAMIN A.;HOVIS WILLIAM P.;LIANG THOMAS W.;RUDRUD PAUL W.
分类号 G11C7/00 主分类号 G11C7/00
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