NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light-emitting element which can improve adhesion of an n-side electrode to a semiconductor layer.

SOLUTION: The present blue-violet semiconductor laser element 100 (nitride-based semiconductor light-emitting element) comprises an n-type GaN substrate 1 and an n-side electrode 22 including an ohmic electrode layer 30. The ohmic electrode layer 30 of the n-side electrode 22 includes a Si layer 31 of amorphous Si formed to partially cover an undersurface 1a of the n-type GaN substrate 1 and a Ti layer 32 formed to contact a surface of the Si layer 31 on the side opposite to the n-type GaN substrate 1 and the undersurface 1a of the n-type GaN substrate 1 not covered with the Si layer 31.

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