| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state imaging device for color imaging, which can achieve a color difference that has no problem from a practical viewpoint without using an infrared light cut filter. <P>SOLUTION: In a solid state imaging device 100, a plurality of light-receiving parts P including a pixel electrode 3, a counter electrode 5 facing the pixel electrode 3, a light-receiving layer 4 including a photoelectric conversion layer provided between the pixel electrode 3 and the counter electrode 5 are arrayed above a semiconductor substrate 1. Spectral sensitivity characteristics of the light-receiving part P satisfy the following conditions: (1) spectral sensitivity in a wavelength of 600 nm is 70% and over; (2) spectral sensitivity monotonously decreases in a range of a wavelength of 600 nm and over; (3) spectral sensitivity in a wavelength of 700 nm is 30% and under of the spectral sensitivity in the wavelength of 600 nm; and (4) spectral sensitivity in a wavelength of 750 nm is 10% and under. <P>COPYRIGHT: (C)2012,JPO&INPIT |
