| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high performance InN-based FET which can significantly reduce surface charge storage on a crystal surface participating in a gate operation and obtain pinch-off characteristics. <P>SOLUTION: A semiconductor device that is a field effect transistor including an InN-based semiconductor as a channel layer in which a stepped portion is formed on a surface (c-plane) of a channel layer 2 composed of an InN-based semiconductor to form a sidewall surface 2a composed of a-plane or m-plane of a hexagonal crystal of a nitride semiconductor, a gate electrode 6 is arranged on the sidewall surface 2a, and a source electrode 3 and a drain electrode 4 are formed on the c-plane so as to sandwich the gate electrode 6. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012169470(A) |
申请公布日期 |
2012.09.06 |
| 申请号 |
JP20110029558 |
申请日期 |
2011.02.15 |
| 申请人 |
NIPPON TELEGR & TELEPH CORP <NTT>;RITSUMEIKAN |
发明人 |
MAEDA YUKIHIKO;NANISHI SHIGEYUKI |
| 分类号 |
H01L29/78;H01L21/28;H01L21/306;H01L21/336;H01L21/338;H01L29/41;H01L29/417;H01L29/778;H01L29/786;H01L29/812 |
主分类号 |
H01L29/78 |
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