METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To form a silicon nitride film in which silicon is too much against nitride in stoichiometric term.

SOLUTION: The method of manufacturing a semiconductor includes a step for forming a silicon nitride film on a substrate in which silicon is too much against nitride in stoichiometric manner by repeating following cycles by a plurality of times, as one cycle: a step in which a silicon-contained material is supplied to a substrate in a process chamber, and then the silicon-contained material is thermally decomposed so that a silicon film having several atom layers or less are deposited on the substrate; a step for removing a silicon-contained material remaining in the process chamber out of the process chamber; a step in which a nitrogen-contained material is supplied to the substrate in the process chamber, and under the condition in which a nitriding reaction with the nitrogen-contained material of the silicon film becomes unsaturated, the silicon film is thermally nitrided; and a step for removing the nitrogen-contained material remaining in the process chamber out of the process chamber.

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