发明名称 |
GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A group III nitride crystal substrate is provided wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.9×10−3, and wherein the main surface has a plane orientation inclined in a <11-20> direction at an angle equal to or greater than 10° and equal to or smaller than 81° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.
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申请公布号 |
US2012223417(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201213469576 |
申请日期 |
2012.05.11 |
申请人 |
ISHIBASHI KEIJI;YOSHIZUMI YUSUKE;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ISHIBASHI KEIJI;YOSHIZUMI YUSUKE |
分类号 |
H01L29/20;B32B5/16;C01B21/06;H01L21/66 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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