发明名称 |
SOLUTION PROCESSIBLE HARDMASKS FOR HIGH RESOLUTION LITHOGRAPHY |
摘要 |
Solution processible hardmasks are described that can be formed from aqueous precursor solutions comprising polyoxometal clusters and anions, such as polyatomic anions. The solution processible metal oxide layers are generally placed under relatively thin etch resist layers to provide desired etch contrast with underlying substrates and/or antireflective properties. In some embodiments, the metal oxide hardmasks can be used along with an additional hardmask and/or antireflective layers. The metal oxide hardmasks can be etched with wet or dry etching. Desirable processing improvements can be obtained with the solution processible hardmasks. |
申请公布号 |
US2012223418(A1) |
申请公布日期 |
2012.09.06 |
申请号 |
US201213407541 |
申请日期 |
2012.02.28 |
申请人 |
STOWERS JASON K.;MEYERS STEPHEN T.;KOCSIS MICHAEL;KESZLER DOUGLAS A.;GRENVILLE ANDREW |
发明人 |
STOWERS JASON K.;MEYERS STEPHEN T.;KOCSIS MICHAEL;KESZLER DOUGLAS A.;GRENVILLE ANDREW |
分类号 |
H01L23/00;H01L21/311 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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