| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a highly reliable semiconductor device by imparting stable electric characteristics to a transistor using an oxide semiconductor film. <P>SOLUTION: Carriers unintentionally occurring in an oxide semiconductor film can be reduced when a p-type oxide semiconductor material is contained in an n-type oxide semiconductor film. This is because an electron unintentionally occurring in the n-type oxide semiconductor film disappears due to recombination with a hole occurring in the p-type oxide semiconductor material. Accordingly, carriers unintentionally occurring in the oxide semiconductor film can be reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
