Semiconductor Device Comprising a Capacitor Formed in the Metallization System Based on Dummy Metal Features

摘要

When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with“regular”metal features, thereby achieving a very efficient overall process flow. At a certain manufacturing stage, the metal of the placeholder metal region may be removed on the basis of a wet chemical etch recipe followed by the deposition of the electrode materials and the dielectric materials for the capacitive structure without unduly affecting other portions of the metallization system. In this manner, very high capacitance values may be realized on the basis of a very efficient overall manufacturing flow.