发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of reducing a peak current. <P>SOLUTION: A semiconductor storage device comprises: a memory cell array in which a plurality of memory cells are arranged in rows and columns; a plurality of even-numbered bit lines arranged in the columns with even numbers; a plurality of odd-numbered bit lines arranged in the columns with odd numbers adjacent to the columns with even numbers; and a plurality of sense amplifiers 11 each of which is selectively connected to the odd-numbered bit lines and even-numbered bit lines. Each of the sense amplifiers comprises: first and second inverter circuits 68 and 69 for which a latching connection is made so as to have data held in first and second nodes; and a sensing part including first and second transistors P11 and P12, in each of which a current control signal is supplied to a gate, one end of a current path is connected to a first power supply voltage and the other end of the current path is connected to a control terminal of the corresponding first or second inverter circuit. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012169008(A) 申请公布日期 2012.09.06
申请号 JP20110029107 申请日期 2011.02.14
申请人 TOSHIBA CORP;TOSHIBA INFORMATION SYSTEMS (JAPAN) CORP 发明人 KAMATA YOSHIHIKO;SHIMIZU YUKI;TANIWAKI FUMITAKA;KARIYA HIROTAKA
分类号 G11C16/06;G11C16/02;G11C16/04 主分类号 G11C16/06
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