| 摘要 |
PURPOSE: A light emitting device is provided to reduce crystal defects and improve brightness. CONSTITUTION: A first undoped semiconductor layer(12) is formed on a substrate(10). A crystallization control layer(13) is formed on the first undoped semiconductor layer. An -ntype semiconductor layer(14) is formed on the crystallization control layer. An n-type contact layer(15) is formed on the n-type semiconductor layer. A second undoped semiconductor layer(16) is formed on the n-type contact layer. An active layer(17) is formed on the second undoped semiconductor layer. |
