发明名称 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
摘要 <p>PURPOSE: A resist composition and a method for manufacturing resist patterns using the same are provided to sufficiently widen the focus margin of the resist patterns. CONSTITUTION: A resist composition includes a resin with a structural unit represented by chemical formula I, an acid generator, and a compound represented by chemical formula II. In chemical formula I, R1 is a hydrogen atom, a halogen atom, or a C1-6 alkyl group with/without one or more halogen atoms; X1 is a C2-36 heterocyclic group, and one or more hydrogen atoms in the heterocyclic group is substitutable with a halogen atom, a hydroxyl group, a C1-24 hydrocarbon group, a C1-C12 alkoxy group, a C2-4 acyl group, or a C2-4 acyloxy group. In chemical formula II, R3 and R4 are respectively C1-12 hydrocarbon groups, C1-6 alkoxy groups, C2-7 acyl groups, C2-7 acyloxy groups, C2-7 alkoxycarbonyl groups, nitro groups, or halogen atoms; and m and n are respectively the integer of 0 to 4.</p>
申请公布号 KR20120098473(A) 申请公布日期 2012.09.05
申请号 KR20120018893 申请日期 2012.02.24
申请人 SUMITOMO CHEMICAL CO., LTD. 发明人 ICHIKAWA KOJI;YASUE TAKAHIRO;KAMABUCHI AKIRA
分类号 G03F7/004;G03F7/26 主分类号 G03F7/004
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