NON VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

PURPOSE: A nonvolatile memory device and an operating method thereof are provided to minimize verification time by applying a single page region in a second program operation after information about the optimum program start voltage is stored in a plurality of sub cells. CONSTITUTION: A page region includes a plurality of normal cells and a plurality of sub cells. A bit pass detection unit(920) outputs one bit pass signal when a cell programmed with a larger voltage than a reference voltage occurs among program target cells in the page region. A program pulse application number storing unit(940) stores the number of program pulses applied until one bit pass signal is outputted in a first program operation of the page region in the plurality of the sub cells. A program start voltage setting unit(930) sets a program start voltage about a second program operation of the page region based on the application number of the program pulses stored in the plurality of the sub cells. [Reference numerals] (900) Memory cell array; (910) Page buffering unit; (920) Bit pass detection unit; (930) Program start voltage setting unit; (940) Program pulse application number storage unit; (950) Program pulse counting unit; (960) High voltage generator; (AA) Controller