发明名称 |
Methods for purifying metallurgical silicon |
摘要 |
A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.
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申请公布号 |
US8257492(B2) |
申请公布日期 |
2012.09.04 |
申请号 |
US20100947777 |
申请日期 |
2010.11.16 |
申请人 |
HOSHINO MASAHIRO;KAO CHENG C. |
发明人 |
HOSHINO MASAHIRO;KAO CHENG C. |
分类号 |
C30B28/00 |
主分类号 |
C30B28/00 |
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