发明名称 3D semiconductor device
摘要 A semiconductor device includes a first transistor layer and a second transistor layer overlaying the first transistor layer, wherein said first transistor layer comprises a plurality of flip-flops each having a selectively coupleable additional input generated by said second transistor layer.
申请公布号 US8258810(B2) 申请公布日期 2012.09.04
申请号 US20100894252 申请日期 2010.09.30
申请人 MONOLITHIC 3D INC. 发明人 OR-BACH ZVI;WURMAN ZE'EV
分类号 H03K19/177;H01L23/02 主分类号 H03K19/177
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