| 摘要 |
According to one embodiment, a nonvolatile semiconductor memory device includes a silicon-containing substrate, a plurality of memory cells, and an insulating film. The substrate includes silicon. The plurality of memory cells is provided on the substrate with a spacing therebetween. The insulating film is provided on a sidewall of the memory cell. The insulating film includes a protrusion protruding toward an adjacent one of the memory cells above a void portion is provided between the memory cells. |
