摘要 |
A semiconductor device having an SRAM macro which has a power-off function and facilitates a design associated with a change in storage capacity is provided. The semiconductor device has plural layout units each including a memory array having plural memory cells in an SRAM, a first peripheral circuit that writes data into the memory array and reads the data from the memory array, and a switch group that disconnects the memory array and the first peripheral circuit, and power wires. |